1955 — Magnetic core memory had the same reading writing principle as MRAM 1984 — Arthur V. Pohm and James M. Daughton, while working for Honeywell, developed the first magnetoresistance memory devices. In this work we review some of these requirements and discuss the fundamental physical principles of STT-MRAM operation, covering the range from device level to chip array performance, and methodology for its development. ; 1984 — GMR effect discovered; 1988 — European scientists (Albert Fert and Peter Grünberg) discovered the "giant magnetoresistive effect" in thin-film structures. Reliable sensing under the limited tunneling magneto-resistance (TMR) of STT-MRAM bit-cells is known Magnetoresistive Random Access Memory (MRAM) is a non-volatile computer memory (NVRAM) technology, which has been in development since the 1990s. MRAM (magnetoresistive random access memory) is a method of storing data bits using magnetic states instead of the electrical charges used by dynamic random access memory ( DRAM ). A description of the principles and operation of classical and spin-momentum Magnetoresistive RAM (MRAM) computing with STT-MRAM that can perform a range of arithmetic, logic, and vector operations. Its … In April 2016 Everspin announced that it started shipping 256Mb ST-MRAM samples to customers.The new chips demonstrate interface speeds comparable to DRAM, with DDR3 and DDR4 interfaces. Several companies, including IBM and Samsung, Everspin, Avalanche Technologies, Spin Transfer Technologies and Crocus are developing STT-MRAM chips. STT-MRAM chips. (Some figures may appear in colour only in the online journal) 1. Two potential barriers to MRAM product success are yield of the magnetic cells and the scalability of MRAM to 100 nm dimensions. Magnetoresistive random access memory (MRAM) is a non-volatile and non-destructive read out memory, which is based on a magnetic anisotropy energy to retain information and the principle of magnetoresistance to retrieve information . Development of magnetoresistive random access memory (MRAM) is progressing toward products [1,2,3,4,5]. Section 2 describes a new MRAM memory cell and architecture which should circumvent cell yield The various MRAM generations are described with a particular focus on spin-transfer torque MRAM (STT-MRAM) which is currently receiving the greatest attention. Keywords: MRAM, spintronics, spin electronics, magnetic … Working principle of MRAM. In STT-CiM, the core data array is the same as standard STT-MRAM; hence, memory density and the efficiency of read and write operations are maintained. The working principles of these various MRAM generations, the status of their developments, and demonstrations of working circuits, including already commercialized MRAM products, are discussed. •Working Principle, Advantages and Disadvantages Need for New Technology Next Generation Memory Devices •Commercially Available: MRAM, PCRAM, CBRAM, FeRAM •Working Principle, Advantages and Disadvantages •Infant memories: STT-RAM, SONOS, Millipede, NRAM •Working Principle, Advantages and Disadvantages Comparison